Close-up of the semiconducting 2D alloy (IMAGE)

Japan Advanced Institute of Science and Technology

Close-up of the semiconducting 2D alloy

Caption

Scanning tunneling microscopy image of a Si-Ge alloy with a composition of Si<sub>5.67</sub>Ge<sub>0.33</sub>. Tall protrusions correspond to Ge atoms and short ones to Si atoms. The distance between protrusions is only 0.64 nm.

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Picture Courtesy: Antoine Fleurence from JAIST

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