Top-Gate Organic Field-Effect Transistor with Bilayer Gate Insulator (IMAGE)

Georgia Institute of Technology

Top-Gate Organic Field-Effect Transistor with Bilayer Gate Insulator

Caption

Researchers at Georgia Tech have demonstrated a new transistor for use on flexible plastic electronics, known as a top-gate organic field-effect transistor with a bilayer gate insulator. The transistor's properties give it incredible stability while exhibiting good performance.

Credit

Canek Fuentes-Hernandez/Georgia Tech

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