Using Pressure to Control the Properties of Graphene Transistors (IMAGE)

Columbia University

Using Pressure to Control the Properties of Graphene Transistors

Caption

By compressing layers of boron nitride and graphene, researchers were able to enhance the material's band gap, bringing it one step closer to being a viable semiconductor for use in today's electronic devices.

Credit

Philip Krantz

Usage Restrictions

To be used only in conjunction with the associated release.

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.