The Concept of a Silicon-Based Ferroelectric Tunnel Junction (IMAGE)

Moscow Institute of Physics and Technology

The Concept of a Silicon-Based Ferroelectric Tunnel Junction

Caption

Information is written by applying an external electric field, which changes the direction of the ferroelectric's polarization vector, and this in turn changes the shape of the potential barrier. Information is read by measuring the tunnel current, which depends on the shape of the barrier.

Credit

Image courtesy of the authors of the study.

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.