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World Scientific

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As a promising backbone material, Si nanowires (SiNWs) have been utilized to integrate with Ge quantum dots (GeQDs). The studies of SiNW/GeQD composite materials have attracted attention due to their excellent optical and electrical properties. In this paper, recent research on the preparation and growth mechanisms of SiNW/GeQD composite materials is reviewed. The growth of GeQDs in the radial and axial directions of SiNWs are introduced respectively. Some problems and several prospective structures of SiNW/GeQD composite materials are proposed.

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Xiaokang Weng <em>et al</em>.

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