Ultra-low Noise Transistor (IMAGE) California Institute of Technology Caption Cross sectional image of ultra-low noise InP transistor. Electrons, accelerated in the high mobility channel under the 100 nm gate, collide and dissipate heat that fundamentally limits the noise performance of the transistor. Credit Illustration courstey of Lisa Kinnerud and Moa Carlsson, Krantz NanoArt/Chalmers University Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.