Ultra-low Noise Transistor (IMAGE)

California Institute of Technology

Ultra-low Noise Transistor

Caption

Cross sectional image of ultra-low noise InP transistor. Electrons, accelerated in the high mobility channel under the 100 nm gate, collide and dissipate heat that fundamentally limits the noise performance of the transistor.

Credit

Illustration courstey of Lisa Kinnerud and Moa Carlsson, Krantz NanoArt/Chalmers University

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