Structural and Optical Properties of Single Monolayer Islands (IMAGE)
Caption
a, TEM cross-section image of an In(Ga)N/GaN single monolayer island. b, A high magnification HAADF-STEM image of the In(Ga)N single atomic monolayer, while the top panel shows the corresponding atomic schematic. c, Tilted-view SEM image of arrays of after wet-etched and regrown nanoimprinted In(Ga)N/GaN pillars, inset of the figure represents a typical pillar. d, Photoluminescence spectrum of the emitter from the chosen measurement regions at 8 K under 355 nm excitation. e, Autocorrelation of the main peak as the orange shaded rectangle and together with the lower energy peaks as the yellow shaded rectangle in figure d.
Credit
by Xiaoxiao Sun, Ping Wang, Tao Wang, Ling Chen, Zhaoying Chen, Kang Gao, Tomoyuki Aoki, Li Mo, Jian Zhang, Tobias Schulz, Martin Albrecht, Weikun Ge, Yasuhiko Arakawa, Bo Shen, Mark Holmes, and Xinqiang Wang
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