3-D Modulation-Doping Boosts Performance of Alloy Semiconductor SiGe (IMAGE)

Boston College

3-D Modulation-Doping Boosts Performance of Alloy Semiconductor SiGe

Caption

While long valued for high-temperature applications, the bulk alloy semiconductor SiGe hasn't lent itself to broader adoption because of its low thermoelectric performance and the high cost of Germanium. A novel nanotechnology design created by researchers from Boston College and MIT has shown a 30 to 40 percent increase in thermoelectric performance and reduced the amount of costly Germanium.

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Nano Letters

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