Device structure and working principle of the graphene/ insulation/ silicon (GIS) heterojunction photodetectors (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Device structure and working principle of the graphene/ insulation/ silicon (GIS) heterojunction photodetectors

Caption

a, Schematic and b, photo image of the fabricated wafer-scale graphene/insulation/Si (GIS) heterojunction photodetectors. c, Cross-sectional HR-TEM image of the ALD deposited AlN films on Si substrate. d, Proposed working mechanisms of the GIS heterojunction photodetector showing the tunneling process from minority carriers of silicon and hot carriers from graphene with impact ionization. e, Spectra-dependent photocurrent responsivity of the GIS tunneling photodetector with 15.3-nm AlN tunneling layer at a bias of -10 V, comparing with the control (conventional graphene/Si heterojunction photodetectors) and reference silicon PIN devices. f, Comparison of the photocurrent enhancement for the GIS devices using different insulating materials: SiO₂, Al₂O₃ and AlN.

Credit

by Jun Yin, Lian Liu, Yashu Zang, Anni Ying, Wenjie Hui, Shusen Jiang, Chunquan Zhang, Tzuyi Yang, Yu-Lun Chueh, Jing Li and Junyong Kang

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CC BY

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