Atomistic Calculations Predict that Boron Incorporation Increases the Efficiency of LEDs (IMAGE)
Caption
This is the crystal structure of a BInGaN alloy. Using atomistic calculations and high-performance supercomputers at the NERSC facility, Logan Williams and Emmanouil Kioupakis at the University of Michigan predicted that incorporating boron into the InGaN active region of nitride LEDs reduces or even eliminates the lattice mismatch with the underlying GaN layers while keeping the emission wavelength approximately the same. The lattice matching enables the growth of thicker active regions and increases the efficiency of LEDs at high power.
Credit
Michael Waters and Logan Williams
Usage Restrictions
None
License
Licensed content