A New Strategy of Fabricating P-N Junction in Single Crystalline Si Nanowires, Twisting (IMAGE)

Science China Press

A New Strategy of Fabricating P-N Junction in Single Crystalline Si Nanowires, Twisting

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Illustration of the relative formation energy as function of twist rate γ of doped Si nanowire for Sb and B dopants at different atomic sites. The strain-free and twisted Si nanowires are shown at the axial view.

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