Doping Mechanism (IMAGE)

Harvard John A. Paulson School of Engineering and Applied Sciences

Doping Mechanism

Caption

During fabrication, the annealing process injects hydrogen ions into thin films of samarium nickelate (SNO) and yttrium-doped barium zirconate (BYZ). During operation, an electric field moves the charges from one layer to the other, and the influx or loss of electrons modulates the band gap in the SNO, resulting in a very dramatic change in conductivity.

Credit

Image courtesy of Jian Shi.

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