Curvature Induces Strain in Overlying Crystals (IMAGE)

DOE/Oak Ridge National Laboratory

Curvature Induces Strain in Overlying Crystals

Caption

Strain-tolerant, triangular, monolayer crystals of WS2 were grown on SiO2 substrates patterned with donut-shaped pillars, as shown in scanning electron microscope (bottom) and atomic force microscope (middle) image elements. The curvature of the pillars induced strain in the overlying crystals that locally altered their optoelectronic properties, as shown in bright regions of photoluminescence (top).

Credit

Christopher Rouleau/Oak Ridge National Laboratory, US Dept. of Energy

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.