Figure (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

Figure

Caption

A: Optical image and band diagram of the heterojunction formed by the thickness variation of black phosphorus 2D material. B: Schematic of the tunnel field-effect transistor and the thickness-dependent bandgap. C: Characteristic transfer curve showing steep subthreshold swing and high on-current.

Credit

Professor Sungjae Cho, KAIST

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