Ion Implantation with Low Energy (IMAGE)

Tomsk Polytechnic University

Ion Implantation with Low Energy

Caption

Scientists from Tomsk Polytechnic University developed a new method of ion implantation that dramatically expands the application of the alloying process in the industry. This is a highly intensive implantation of ions with low energy that can revolutionize the technology of improving material properties. TPU scientists have already experimentally confirmed the possibility of creating a doped surface layer with a depth of several hundred micrometers, while other methods of ion doping enable a depth of several tens and hundreds of nanometers.

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Tomsk Polytechnic University

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