GaN p-n Diode Fabricated on a High-Quality Bulk GaN Substrate (image) American Institute of Physics Share Print E-Mail Caption This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets show a GaN p-n diode fabricated on a high-quality bulk GaN substrate and light emission from the junction under forward bias. Credit Zongyang Hu Usage Restrictions This image may be used only with appropriate caption and credit. Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.