Schematic Representation of the FET Device Used in this Work (image) Tokyo Institute of Technology Share Print E-Mail Caption (a) Schematic representation of the FET device used in this work. (b) Schematic diagram of the interaction between the trapped electron and the percolation pathways mediated by the MW field (top). Multilevel RTN events recorded in the FET current measured at 80 K (bottom). (c) Wideband CW microwave spectroscopy of the FET channel current performed at 4.2 K. Each narrow spike is a separate resonance that is resolved into a Fano or Lorentzian shape at higher resolution (inset). (d) Density of states (red), amplitude change (blue) and coherence times (inset) histograms. Credit Nature Materials Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.