Producing New Infrared Detector Materials (image) U.S. Army Research Laboratory Share Print E-Mail Caption The Molecular Beam Epitaxy (MBE) is being used by Army researchers to produce new infrared detector materials based on InAsSb. This is a III-V semiconductor, a class of materials also used in opto-electronics in many commercial products such as DVD players and cell phones. Credit US Army photo Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.