TAMR and Electroresistance in Aniobium Doped Strontium Titanate (SrTiO3) Semiconductor with Ferromag (image) University of Groningen Share Print E-Mail Caption TAMR and electroresistance in aniobium doped strontium titanate (SrTiO3) semiconductor with ferromagnetic cobalt Top left: a simple device of Co on Nb doped SrTiO3 oxide semiconductor and the four-probe measurement scheme. Top right: a large TAMR value is obtained at room temperature due to a change in the junction tunnel conductance when the magnetization is rotated in respect to the direction of the current flow. Bottom left: the same device geometry is used to study the electroresistance state of the same junction (bottom right). Credit Banarjee group, University of Groningen / Scientific Reports Usage Restrictions With credit Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.