Figure (image) The Korea Advanced Institute of Science and Technology (KAIST) Share Print E-Mail Caption A: Optical image and band diagram of the heterojunction formed by the thickness variation of black phosphorus 2D material. B: Schematic of the tunnel field-effect transistor and the thickness-dependent bandgap. C: Characteristic transfer curve showing steep subthreshold swing and high on-current. Credit Professor Sungjae Cho, KAIST Usage Restrictions News organizations may use or redistribute this image, with proper attribution, as part of news coverage of this paper only. Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.