An Indium Phosphide High Electron Mobility Transistor (image) Chalmers University of Technology Share Print E-Mail Caption This is an electron microscope image of an indium phosphide high electron mobility transistor (InP HEMT). The region affected by the self-heating process is highlighted in the cross section of the InP HEMT. Credit Chalmers University of Technology Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.