Cross Sectional Image of An Ultra-Low Noise Transistor. (image) Chalmers University of Technology Share Print E-Mail Caption This is a cross sectional image of an ultra-low noise transistor. Electrons, accelerated in the high mobility channel under the 100 nanometer gate, collide and dissipate heat that fundamentally limits the noise performance of the transistor. Credit Lisa Kinnerud and Moa Carlsson, Krantz NanoArt Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.