Recent years have seen Indium doped Cadmium Sulfide thin films gain importance as photovoltaic devices. Various techniques have been used to make the CdS:In thin films with chemical baths being most widely used. Due to this acceptance of the manufacturing method, it is important to develop an effective technique to n-dope CdS thin films during the growth process.
In this journal* article by Mexican researchers, J. A. Dávila-Pintle, R. Lozada-Morales, R. Palomino-Merino, B. Rebollo-Plata, C. Martínez-Hipatl, O. Portillo-Moreno, S. Jiménez-Sandoval and O. Zelaya-Ángel, from Benemérita Universidad Autónoma de Puebla and Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional looked to increase the carrier density and to reduce the electrical resistivity of the material - with no sensitive reduction of the forbidden energy band gap. In order to achieve this goal they employed the chemical bath in such a way as to analyse the doping method to determine the most effective dosage resulting in good physical properties useful for a wide field of applications.
The experimental results indicate a successful doping for low indium dosages, a saturation for intermediate doping levels, and a degradation of the doping process for high impurity. Furthermore, they were able to produce the CdS films more efficiently with electronic testing results indicating that this n-type doping process is suitable for producing CdS photovoltaic solar cells.
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