New semiconductor material AlYN - group photo (IMAGE)
Caption
With their work on the epitaxy and characterization of AlYN/GaN heterostructures, the Fraunhofer IAF research team achieved a breakthrough in the field of semiconductor materials.
Credit
Fraunhofer IAF
Usage Restrictions
The use of the photos is permitted exclusively in connection with this press release and with indication of the copyright.
License
Original content