Magnetization switching by asymmetric topological surfaces (IMAGE)

Science China Press

Magnetization switching by asymmetric topological surfaces

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Figure 2. Current-driven switching behaviors in MnSb2Te4 at different temperatures and fields. (a) A schematic of the measurement procedure. (b) The magnetization process induced by dc pulses after the application of an in-plane field of 0.1 T. (c)-(d) Current-induced switching at 14 K under in-plane fields varying from ±0.1 T to ±0.5 T. (e) Current-driven switching under -0.2 T at 4 K to 18 K.

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