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Fig. 4 (a) Schematic diagram of the sample to be etched. (b) SEM top view of the device. (c) SEM 52°(angle with horizontal) side view of the device. (d) Infrared reflectivity spectra of the device in the aIST and cIST states. (e) The forest three-dimensional point cloud and the simulated laser stealth region without device coverage. (f) The forest three-dimensional point cloud and the simulated laser stealth region with device coverage.

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Xin Li, Junbo Yang

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