Figure 1 | Schematic illustrations of indirect photopatterning method of OLED EMLs based on RGB luminophores in single phase network structure. (IMAGE)
Caption
Figure 1 | Schematic illustrations of indirect photopatterning method of OLED EMLs based on RGB luminophores in single phase network structure. a, Process flow for the indirect photopatterning of the first EML pattern in the SPN structure. The first EML are patterned by i) forming a sacrificial photoresist (PR) pattern, ii) spin-coating the EML film, iii) forming the SPN structure by thermal annealing the EML at a low temperature (i.e. 110 °C), and iv) stripping the pre-formed PR pattern. Importantly, the SPN structure provides chemical resistance against solvents used in patterning steps (e.g., a PR solvent, a stripping solvent, and the subsequent primary color emissive material solution) b, Achievement of crosslinked RGB EMLs through repeated indirect photopatterning of the second and third EMLs in the SPN structure. c, Schematic of SPN structure formation using crosslinkable host and dopant molecules. The schematic demonstrates the SPN structure with host and dopant molecules being crosslinked.
Credit
Seunghan Lee et al.
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CC BY