Figure 2 | RGB EML patterns obtained from indirect photopatterning method. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2 | RGB EML patterns obtained from indirect photopatterning method.

Caption

Figure 2 | RGB EML patterns obtained from indirect photopatterning method. a, AFM topography images of line-shaped (width: 3 µm; spacing: 4 µm) green EML patterns. The scale bar is 5 μm. b, Fluorescence microscopy images depicting the three primary colors of light through R/G/B patterns (diameter of circles: 4 µm) and a schematic image (bottom right). The scale bar is 10 μm. c, EL images of operating patterned green OLED. d, Photograph of an operating multicolor patterned OLEDs. The multicolor OLEDs with patterned R/G/B EMLs were fabricated by repeating the indirect patterning process. The results showed that the indirect photopatterning method enables the achievement of higher-resolution RGB pixel patterns compared to those obtained using thermal evaporation patterning with a shadow mask. Furthermore, this patterning method can be applied to full-color display applications without adversely affecting the optoelectronic properties of the EMLs.

Credit

Seunghan Lee et al.

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CC BY

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