Figure 2. Optical analysis of QLEDs with different structures. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2. Optical analysis of QLEDs with different structures.

Caption

Figure 2. Optical analysis of QLEDs with different structures. (a) The reflectance spectra of BE and TE-DIZO devices. Compared to the BE device, the TE-DIZO device exhibit a sharp valley at 630 nm, indicating a strongly localized light field at 630 nm. (b) Power dissipation spectra of BE and TE-DIZO devices. The TE-DIZO device exhibits a significantly reduced SPP peaks and higher waveguide mode intensity. (c) Finite-difference time-domain (FDTD) simulations of TM0 and (d) TE0 mode propagation along the BE device. (e) FDTD simulations of TM0 and (f) TE0 mode propagation along the TE-DIZO device. Compared to the BE device, the TE-DIZO device exhibits a stronger optical field which is mainly localized in the QD layer.  (g) Summary of fraction of power dissipation mode, optical modal gain, optical loss coefficient and optical net gain of TE0 mode at 630 nm of devices (Supplementary Note 6). Thanks to the key design of dual IZO layers, the TE-DIZO device exhibits the highest waveguide mode intensity and the highest optical modal gain, which enables it to show a positive net gain.

Credit

Fengshou Tian et al.

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