Scalable transition metal dichalcogenide memtransistor arrays for energy-efficient artificial neural networks (IMAGE)
Caption
Figure shows (a) Schematic of the MoS2 memtransistor structure, highlighting the selectively treated and untreated areas for Schottky barrier modulation. (b) Optical images of the fabricated memtransistor chip, demonstrating large-scale integration with 12 × 6 arrays. (c) Optical images of an array with a channel length and electrode width of 500 nm.
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National University of Singapore
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