Figure 3. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 3.

Caption

Figure 3. Formation process of the graphene/(Al,Ga)N heterojunction and the energy-band diagram of the (Al,Ga)N/GaN nanowires in the dark (left). Under 310/365 nm illumination, the device operates as a photodetector at 0 V bias (center), while under negative/positive bias it switches to a synaptic mode (right).

Credit

Yukun ZHAO et al.

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