Reshaping spin structures of BiFeO3 for next-generation memory devices (IMAGE)

Institute of Science Tokyo

Reshaping spin structures of BiFeO3 for next-generation memory devices

Caption

By replacing ions at both the bismuth and iron sites in bismuth ferrite (BiFeO3) with heavier elements such as ruthenium and iridium, researchers suppressed the material's natural spin cycloid and unlocked stable weak ferromagnetism at room temperature, a key requirement for low-power memory technologies. Negative thermal expansion near room temperature was also observed.

Credit

Professor Masaki Azuma from Institute of Science Tokyo, Japan

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