Figure 3 (IMAGE)

The University of Hong Kong

Figure 3

Caption

Figure 3: A deep strained GaN device for practical applications. With a mechanically fixed ~3% tensile strain, the device achieves a substantial bandgap redshift from 3.42 eV to 3.34 eV, as demonstrated by the CL spectra in the top-right inset.

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The University of Hong Kong

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