Figure | High-quality 1.2 μm epitaxy is prepared via a variable-temperature growth strategy. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure | High-quality 1.2 μm epitaxy is prepared via a variable-temperature growth strategy.

Caption

Figure | High-quality 1.2 μm epitaxy is prepared via a variable-temperature growth strategy.  a, The designed "flip-chip" epitaxial structure and variable growth temperature of each layer; b, High-angle annular dark-field imaging reveals a uniform distribution of indium atoms within the quantum wells; c, Photoluminescence spectrum before and after annealing reveals a significant improvement in crystal quality and thermal stability.

Credit

Zhicheng Zhang et al.

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