Power module with 1200-V-class GaN transistors (IMAGE)

Fraunhofer Institute for Applied Solid State Physics

Power module with 1200-V-class GaN transistors

Caption

Close-up of the power module developed and manufactured at Fraunhofer IAF, featuring 1200-V-class GaN transistors on an insulating substrate for use in bidirectional DC charging systems

Credit

© Fraunhofer IAF

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