KAIST Develops Low-Temperature Technique for Growing Crystal-Aligned Semiconductor Films (IMAGE)
Caption
Figure 1. Diffusion-steered epitaxial atomic layer deposition of tellurium and structural character of tellurium grown on WSe₂. The figure illustrates how precursors first adsorb weakly onto the van der Waals surface, diffuse across it, and initiate tellurium crystal growth at energetically stable positions. Electron microscopy and optical and structural analyses confirmed that the tellurium grew along a consistent crystallographic orientation, forming a clean interface between the two materials while maintaining extremely low interfacial distortion. The results also demonstrate that, unlike conventional high-temperature growth processes, this technique enables epitaxial growth at a low temperature of 150°C.
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KAIST
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