KAIST Develops Low-Temperature Technique for Growing Crystal-Aligned Semiconductor Films (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

KAIST Develops Low-Temperature Technique for Growing Crystal-Aligned Semiconductor Films

Caption

Figure 2. Conceptual illustration of tellurium thin-film growth using diffusion-steered epitaxial atomic layer deposition. The image depicts the process in which two types of precursors are supplied onto a van der Waals surface, diffuse across the surface, and form a tellurium thin film aligned in a consistent crystallographic direction at energetically stable positions. (AI-generated image)

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KAIST

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