Crystallization pathways of HZO thin films and the role of oxygen vacancies revealed through real-time GIWAXS analysis during heat treatment. (IMAGE)

Seoul National University College of Engineering

Crystallization pathways of HZO thin films and the role of oxygen vacancies revealed through real-time GIWAXS analysis during heat treatment.

Caption

When oxygen vacancies are abundant, crystallization is delayed and the antiferroelectric phase persists longer. When oxygen vacancies are fewer, crystallization is promoted, favoring the formation of the ferroelectric phase.

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© Advanced Functional Materials, originally published in Advanced Functional Materials

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