KAIST Controls Where 2D Semiconductor Crystals Begin to Grow, Addressing a Key Challenge in Stacking AI Chips (IMAGE)
Caption
Figure 3. Comparison of conventional area-selective growth and EF-SCN, with representative results of single-centered nucleation
In conventional area-selective growth, nuclei can form at random positions within the growth region, or several nuclei can form at the same time. In the EF-SCN technique developed by the research team, nucleation at the edges of the growth region is suppressed, so that only one nucleus forms at the center of the pattern. The experimental images below show uniform single-centered nucleation and single-crystal growth across many patterns.
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