Figure 1 (IMAGE)

DGIST (Daegu Gyeongbuk Institute of Science and Technology)

Figure 1

Caption

(a) Schematics of the measurement setup and device geometry. The MW signal is applied to the left gate via a bias tee. (b) Scanning electron microscopy image of a suspended bilayer graphene device. (c) Conductance measured as a function of the left (VL) and right bottom gates (VR). Four regions are labeled according to carrier doping, p-type or n-type, in the left and right regions controlled by the respective bottom gates. Inset: quadratic energy-momentum dispersion relation of bilayer graphene. (d) Conductance trace measured for unipolar doping from p?p to n?n realized by setting VL = VR.

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DGIST

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