Demonstration of High-speed SOT-MRAM Memory Cell Compatible with 300mm Si CMOS Technology (IMAGE)

Tohoku University

Demonstration of High-speed SOT-MRAM Memory Cell Compatible with 300mm Si CMOS Technology

Caption

This is a schematic of the SOT-MRAM cell (Three Terminal Device)

Credit

CIES, Tohoku University

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Credit: CIES, Tohoku University

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