TAMR and Electroresistance in Aniobium Doped Strontium Titanate (SrTiO3) Semiconductor with Ferromag (IMAGE)

University of Groningen

TAMR and Electroresistance in Aniobium Doped Strontium Titanate (SrTiO3) Semiconductor with Ferromag

Caption

TAMR and electroresistance in aniobium doped strontium titanate (SrTiO3) semiconductor with ferromagnetic cobalt Top left: a simple device of Co on Nb doped SrTiO3 oxide semiconductor and the four-probe measurement scheme. Top right: a large TAMR value is obtained at room temperature due to a change in the junction tunnel conductance when the magnetization is rotated in respect to the direction of the current flow. Bottom left: the same device geometry is used to study the electroresistance state of the same junction (bottom right).

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Banarjee group, University of Groningen / Scientific Reports

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