(IMAGE) Tohoku University Caption (Left) Device structure of electric-double-layer transistor with FeSe channel deposited on oxide substrate. (Right) One-monolayer FeSe is realized by electrochemical etching where Fe and Se ions are dissolved into ionic liquid. Credit Junichi Shiogai Usage Restrictions Credit: Junichi Shiogai License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.