Unprecedented single-digit-nanometer magnetic tunnel junction demonstrated (IMAGE)

Tohoku University

Unprecedented single-digit-nanometer magnetic tunnel junction demonstrated

Caption

Fig. 3. MTJ resistance in response to applied current density for the fabricated "shape-anisotropy" MTJs with diameter D = 8.8 and 10.4 nm. Insets show the MTJ resistance as a function of out-of-plane magnetic field (unit: mT) for the same devices.

Credit

Shunsuke Fukami

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Credit: Shunsuke Fukami

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