Better Endurance and Reliable Data Retention: A New STT-MRAM Quad Technology (IMAGE)

Tohoku University

Better Endurance and Reliable Data Retention: A New STT-MRAM Quad Technology

Caption

Figure 2: (a) Shows the thermal stability of the circular diameter for the novel designed advanced-Quad-interface MTJ developed in this study and the conventional Double-interface MTJ. (b) Demonstrates the number of writes cycles (endurance) of the advanced 18 nm Quad-MTJ and Double-MTJ. The endurance of advanced 18 nm Quad-MTJ exceeds at least 6&times;10<sup>11</sup> due to the high write efficiency of the new Quad technology. (c) Indicates the damping constant of the novel ferromagnetic materials used for recording layers 1 and 2. The magnetic damping constant decreases in the order of Single, Double, and Quad, achieving low power consumption and high endurance.

Credit

IEEE & Tohoku University

Usage Restrictions

IEEE & Tohoku University

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.