Better Endurance and Reliable Data Retention: A New STT-MRAM Quad Technology (IMAGE)

Tohoku University

Better Endurance and Reliable Data Retention: A New STT-MRAM Quad Technology

Caption

Figure 1: A schematic illustration of the new advanced Quad-MTJ technology concept. Based on Quad-interface technology with high retention over 10-years, advanced Quad-MTJ realizes a high endurance property by introducing (i) low RA MgO barrier, (ii) low magnetic dumping in recording layer, and (iii) stable reference layer.

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IEEE & Tohoku University

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IEEE & Tohoku University

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