Figure 1 (IMAGE) Moscow Institute of Physics and Technology Caption The left image shows a synapse from a biological brain, the inspiration behind its artificial analogue (right). The latter is a memristor device implemented as a ferroelectric tunnel junction -- that is, a thin hafnium oxide film (pink) interlaid between a titanium nitride electrode (blue cable) and a silicon substrate (marine blue), which doubles up as the second electrode. Electric pulses switch the memristor between its high and low resistance states by changing hafnium oxide polarization, and therefore its conductivity. Credit Elena Khavina/MIPT Press Office Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.