Effects of the doping process (IMAGE) Forschungszentrum Juelich Caption Top: In memristive elements (ECMs) with an undoped, high-purity switching layer of silicon oxide (SiO2), copper ions can move very fast. A filament of copper atoms forms correspondingly fast on the platinum electrode. This increases the total device conductivity respectively the capacity. Due to the high mobility of the ions, however, this filament is unstable at low forming voltages. Center: Gallium ions (Ga3+), which are introduced into the cell (non-volatile doping), bind copper ions (Cu2+) in the switching layer. The movement of the ions slows down, leading to lower switching times, but the filament, once formed remains longer stable. Bottom: Doping with aluminium ions (Al3+) slows down the process even more, since aluminium ions bind copper ions even stronger than gallium ions. Filament growth is even slower, while at the same time the stability of the filament is further increased. Depending on the chemical properties of the introduced doping elements, memristive cells - the artificial synapses - can be created with tailor-made switching and neuromorphic properties. Credit Copyright: Forschungszentrum Jülich / Tobias Schloesser Usage Restrictions The image may be used only in connection with the contents of this press release. please give credit. License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.