Photoluminescence Spectra (IMAGE) Lobachevsky University Caption This image shows photoluminescence spectra of samples with SiO2 films of various thickness, irradiated with Kr +, after annealing at 800°C. The inset shows the temperature dependence of the PL at the maximum for a sample with a film thickness of 160 nm. Credit Lobachevsky University Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.