NIST Nanowire Manipulation Technique (IMAGE)
Caption
Scanning electron microscope image shows a single silicon nanowire positioned in an etched trench using NIST's nanowire manipulation technique. The trench helps keep the nanowire in position during the fabrication of the rest of the test structure, which measures metal/nanowire contact resistance. The scale bar is 20 micrometers long.
Credit
NIST
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